skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


  • Home
  • Search Results
  • Page 1 of 1

Search for: All records

Creators/Authors contains: "Prasad, Bhagwati"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. ; ; ; ; ; ; ; ; ; (, Nano Letters)
    Free, publicly-accessible full text available April 9, 2026
  2. ; ; ; ; ; ; ; ; ; ; et al (, APL Materials)
  3. ; ; ; ; ; ; ; ; ; ; et al (, Science Advances)
    Thin-film electrostatic engineering is used to uncover a hidden antiferroelectric phase. 
    more » « less
    Full Text Available 
  4. ; ; ; ; ; ; ; ; ; ; et al (, Scientific Reports)
    Full Text Available 
  5. ; ; ; ; ; (, Advanced Materials)
    Full Text Available 
  6. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Materials)
    null (Ed.)
    Full Text Available 
  7. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Materials)
    Abstract Results of switching behavior of the improper ferroelectric LuFeO3are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics. 
    more » « less